--- type: product schema_version: 1 stock_number: "78655-1" canonical_url: "https://www.artisantg.com/78655-1/OSI-Optoelectronics-PIN-10D" json_url: "https://www.artisantg.com/78655-1/OSI-Optoelectronics-PIN-10D.json" generated_at: "2026-11-08T07:18:39.154Z" last_updated: "2026-10-14T13:00:51.160-05:00" --- # OSI Optoelectronics / United Detector Technology PIN-10D Planar Diffused Silicon Photodiode _Summary and Categories are this item's record. The description sections and FAQ are machine-assisted and can contain errors; where they disagree with the record, the record is correct, and where description sections disagree with each other, Details wins._ ## Summary - Manufacturer: OSI Optoelectronics - Model: PIN-10D - Condition: Used and in Excellent Condition - Price: $480.00 USD - Availability: In stock, 2 available - Warranty: 1-Year Warranty with 30-Day Return Guarantee - ITAR restricted: No - Shipping weight: 0.4 lb, estimated - Shipping dimensions: 8X8X3 in, estimated ## Categories - Test Equipment > Electrical Test > Electrical-to-Optical (primary) - Military and Embedded Equipment > Embedded & Industrial > Other Modular ## Details This unit includes a storage case. ### Configuration - Package: 'D' Series, Metal - Active Area, Area: 100 mm^2 - Peak Responsivity Wavelength, Typ.: 970λp (nm) - Responsivity at λp, Typ.: 0.65 A/W - Capacitance, -10V, Typ.: 300 pF - Dark Current, -10V, Typ.: 2 nA - NEP, -10V 970 nm, Typ.: 3.9 e-14 W/√Hz - Reverse Voltage, Max.: 30 V - Rise Time, -10V 632nm 50 Ω, Typ.: 43 ns - Package Style: 11/BNC Part Number: 11-01-004 ## Function Detects optical signals in visible to near-infrared spectrum with peak sensitivity at 970nm wavelength. Converts incident photons to electrical current with 0.65 A/W responsivity. Features 100mm² active area planar diffused silicon junction for high quantum efficiency. Operates in photovoltaic or photoconductive mode up to 30V reverse bias. Provides 43ns rise time enabling MHz-range signal detection. Interfaces via BNC connector for direct 50-ohm coaxial connection. Low 2nA dark current and 3.9e-14 W/vHz NEP enables high sensitivity measurements. Applications include spectroscopy, optical power monitoring, laser detection, and radiometry. ## Images - - - - -