Features:
- PC100 and PC133 Compliant
- 125 and 133 MHz SDRAM Components
- Unbuffered
- Fully Synchronous
The Micron Technology MT8LSDT1664A/MT16LSDT3264A Series 168-Pin SDRAM Dual In-Line Memory Modules are
high-speed CMOS, dynamic random-access, 128MB
and 256MB memory modules organized in a x64 configuration. These modules use internally configured
quad-bank SDRAMs with a synchronous interface (all
signals are registered on the positive edge of the clock
signals CK0-CK3).
Read and write accesses to the SDRAM modules are
burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed
by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used
to select the device bank and row to be accessed. The address bits registered coincident with the
READ or WRITE command are used to select the starting column location for the burst access.
The modules provide for programmable READ or
WRITE burst lengths of 1, 2, 4, or 8 locations, or the full
page, with a burst terminate option. An AUTO
PRECHARGE function may be enabled to provide a
self-timed row recharge that is initiated at the end of
the burst sequence.
The modules use an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be
changed on every clock cycle to achieve a high-speed,
fully random access. Precharging one device bank while
accessing one of the other three device banks will hide
the precharge cycles and provide seamless, highspeed, random-access operation.
The modules are designed to operate in 3.3V, low power memory systems. An auto refresh mode is provided, along with a power-saving, power-down mode.
All inputs and outputs are LVTTL-compatible.
SDRAM modules offer substantial advances in
DRAM operating performance, including the ability to
synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks in order to hide precharge
time and the capability to randomly change column
addresses on each clock cycle during a burst access.
The MT8LSDT1664AG-10EB1 Micron Technology 168-Pin 128MB SDRAM Dual In-Line Memory Module may still be available for purchase and support from Artisan Technology Group beyond End-Of-Life (EOL) by the manufacturer (OEM).
Artisan Scientific Corporation dba Artisan Technology Group is not affiliated with or a distributor for Micron Technology. The depiction, description, or sale of products featuring names, trademarks, brands, and logos is for identification and/or reference purposes only and does not indicate any affiliation with or authorization by any rights holder.